Scanning tunneling microscopy study of the evolution of the GaAs(001) surface during the (2X4)-(4X2) phase transition

被引：8

作者：

Chizhov, I

Lee, G

Willis, RF

Lubyshev, D

Miller, DL

机构：

[1] Penn State Univ, Dept Phys, University Pk, PA 16802 USA

[2] Penn State Univ, Dept Elect Engn, University Pk, PA 16802 USA

来源：

APPLIED SURFACE SCIENCE | 1998年 / 123卷

关键词：

scanning tunneling microscopy; low-energy electron diffraction; surface phase transitions; GaAs; III-V semiconductors;

D O I：

10.1016/S0169-4332(97)00434-0

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Evolution of the GaAs(001) surface during the transition from the As-rich 2 X 4 to the Ga-rich 4 X 2 phase has been studied by scanning tunneling microscopy (STM). It was found that the (2 X 4) --> (4 X 2) transition proceeds via the formation of intermediate multi-domain phases exhibiting 3 X 6 and 4 X 6 low-energy electron-diffraction (LEED) patterns. The STM images reveal that the 3 X 6 phase is composed of regions of the '2 X 6' and another phase with no long-range order, while the 4 X 6 phase in addition contains 4 X 2 domains. A new structural model for the '2 X 6' phase based on the analysis of high-resolution dual polarity bias STM images is proposed. (C) 1998 Elsevier Science B.V.

引用

页码：192 / 198

页数：7

共 30 条

[1] SURFACE RECONSTRUCTIONS OF GAAS(100) OBSERVED BY SCANNING TUNNELING MICROSCOPY [J].