Nucleation and step flow on ultraflat silicon

被引：10

作者：

Finnie, P ^{[1
]}

Homma, Y ^{[1
]}

机构：

[1] NTT, Basic Res Labs, Atsugi, Kanagawa 2430198, Japan

来源：

PHYSICAL REVIEW B | 2000年 / 62卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.62.8313

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Step-flow crystal growth is possible on a very large scale on Si(111). The growth mode changes at the (7x7)-("1x1") phase-transition temperature. Nucleation of new Steps can be controlled by intentionally introducing contaminants or particulates. In general, steps bounding small structures move more quickly than those bounding large structures. Step motion appears symmetric under time reversal (erosion versus growth) and is similar under topological inversion (islands versus craters). The observed motion fits well with the simplest reasonable physical theory.

引用

页码：8313 / 8317

页数：5

共 22 条

[1]

ALFONSO C, 1993, SURF SCI, V291, pL745, DOI 10.1016/0039-6028(93)91470-A

[2] LEEM determination of critical terrace widths for Si/Si(111) step flow growth [J].