Size control of carbon-induced Ge quantum dots

被引：16

作者：

Beyer, A ^{[1
]}

Müller, E

Sigg, H

Stutz, S

Grützmacher, D

Leifeld, O

Ensslin, K

机构：

[1] Paul Scherrer Inst, Lab Micro & Nanotechnol, CH-5232 Villigen, Switzerland

[2] Ecole Polytech Fed Lausanne, Inst Phys Expt, CH-1015 Lausanne, Switzerland

[3] ETH Zurich, Solid State Phys Lab, CH-8093 Zurich, Switzerland

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 20期

关键词：

D O I：

10.1063/1.1326033

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Self-assembled C-induced Ge dots are islands which are not formed by the Stranski-Krastanov mode of growth. They are formed by a three-dimensional mode originating from the undulating strain fields of the C alloyed Si (100) surface. This opens additional possibilities to control the size and the shape of these dots by modifying the strain fields of the C-alloyed Si surface. Here, we show that the amount of C deposited prior to the growth of the Ge islands strongly effects the diameter and height of the dots. Increasing the C coverage to 0.3 monolayer leads to the formation of comparably compact islands. Consequently, the photoluminescence of the dots is shifted to lower energies compared to dots grown with lower C coverages. (C) 2000 American Institute of Physics. [S0003-6951(00)02946-6].

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页码：3218 / 3220

页数：3

相关论文

共 13 条

[1] The physical origin of InAs quantum dots on GaAs(001) [J].

Bottomley, DJ .

APPLIED PHYSICS LETTERS, 1998, 72 (07) :783-785

[2] The influence of carbon on the surface morphology of Si(100) and on subsequent Ge island formation [J].

Butz, R ;

Lüth, H .

THIN SOLID FILMS, 1998, 336 (1-2) :69-72

[3]

GUEDJ C, COMMUNICATION

[4] Growth of Si1-yCy/Si- and Si1-x-yGexCy/Si-multiple quantum wells using molecular beam epitaxy [J].

Hartmann, R ;

Grutzmacher, D ;

Muller, E ;

Gennser, U ;

Dommann, A ;

Schroter, P ;

Warren, P .

THIN SOLID FILMS, 1998, 318 (1-2) :158-162

[5] Band gap and band alignment of strain reduced Si/Si1-x-yGexCy multiple quantum well structures obtained by photoluminescence measurements [J].

Hartmann, R ;

Gennser, U ;

Sigg, H ;

Grützmacher, D ;

Ensslin, K .

APPLIED PHYSICS LETTERS, 1998, 73 (09) :1257-1259

[6] Structural and optical characterization of InP/GaInP islands grown by solid-source MBE [J].

Kurtenbach, A ;

Ulrich, C ;

JinPhillipp, NY ;

Noll, F ;

Eberl, K ;

Syassen, K ;

Phillipp, F .

JOURNAL OF ELECTRONIC MATERIALS, 1996, 25 (03) :395-400

[7] Ordered arrays of quantum dots: Formation, electronic spectra, relaxation phenomena, lasing [J].

Ledentsov, NN ;

Grundmann, M ;

Kirstaedter, N ;

Schmidt, O ;

Heitz, R ;

Bohrer, J ;

Bimberg, D ;

Ustinov, VM ;

Shchukin, VA ;

Egorov, AY ;

Zhukov, AE ;

Zaitsev, S ;

KopEv, PS ;

Alferov, ZI ;

Ruvimov, SS ;

Kosogov, AO ;

Werner, P ;

Gosele, U ;

Heydenreich, J .

SOLID-STATE ELECTRONICS, 1996, 40 (1-8) :785-798

[8] Formation and ordering effects of C-induced Ge dots grown on Si (001) by molecular beam epitaxy [J].

Leifeld, O ;

Beyer, A ;

Müller, E ;

Kern, K ;

Grützmacher, D .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2000, 74 (1-3) :222-228

[9] Dimer pairing on the C-alloyed Si(001) surface [J].

Leifeld, O ;

Grützmacher, D ;

Müller, B ;

Kern, K ;

Kaxiras, E ;

Kelires, PC .

PHYSICAL REVIEW LETTERS, 1999, 82 (05) :972-975

[10]

MO YW, 1990, PHYS REV LETT, V65, P1020, DOI 10.1142/S0217984990001732