SmxNd1-xNiO3 thin-film solid solutions with tunable metal-insulator transition synthesized by alternate-target pulsed-laser deposition

被引：61

作者：

Ambrosini, A ^{[1
]}

Hamet, JF ^{[1
]}

机构：

[1] ISMRA Univ Caen, CNRS, UMR 6508, Lab CRISMAT, F-14050 Caen, France

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 05期

关键词：

D O I：

10.1063/1.1541116

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thin-film solid solutions of SmxNd1-xNiO3 were synthesized on NdGaO3 substrates by pulsed-laser deposition using alternating NdNiO3 and SmNiO3 targets. The films were characterized by x-ray diffraction and variable-temperature four-probe conductivity measurements. The films grow in the {100}(pseudocubic) direction. There is a nearly linear increase of the metal-insulator transition from 199 K for x=0 to 378 K for x=1, with the composition corresponding to x=0.6 displaying a transition near room temperature. (C) 2003 American Institute of Physics.

引用

页码：727 / 729

页数：3

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