Wetting of Si surfaces by Au-Si liquid alloys

被引:124
作者
Ressel, B
Prince, KC
Heun, S
Homma, Y
机构
[1] Sincrotrone Trieste, I-34012 Trieste, Italy
[2] NTT Corp, Basic Res Labs, Atsugi, Kanagawa 2430198, Japan
关键词
D O I
10.1063/1.1558996
中图分类号
O59 [应用物理学];
学科分类号
摘要
The behavior of liquid Au-Si alloys on Si surfaces covered by a monolayer of gold has been investigated by ultrahigh-vacuum scanning electron microscopy. On the (111) surface, the alloy displays a constant contact angle with the surface from the eutectic temperature up to a temperature of 650 degreesC and thereafter the contact angle increases linearly with temperature. As observed in previous work, the shape of the liquid droplets changes from circular at lower temperature to hexagonal at higher temperature. In contrast, on the (100) surface, the contact angle increases linearly from the eutectic temperature to high temperature. The behavior of the shape of the droplets is, however, reversed: it is polygonal (octagonal) at lower temperature and becomes round at higher temperature. This behavior is explained in terms of the relative surface energy of the two surfaces and changing line tension of the liquid-solid-vapor phase line. In addition, the behavior of Au-Si droplets on vicinal and patterned surfaces of Si has been examined. The droplets cause step bunching and modify the local surface structure. Solidification of the droplets on all surfaces leads to phase separation. (C) 2003 American Institute of Physics.
引用
收藏
页码:3886 / 3892
页数:7
相关论文
共 28 条
  • [1] ANTHONY TR, 1972, J APPL PHYS, V43, P273
  • [2] A NEW PROCEDURE FOR THE DETERMINATION OF THE FREE-ENERGIES OF SOLID FLUID INTERFACES FROM THE ANISOTROPY OF WETTING OF A MELT ON ITS SOLID
    CHATAIN, D
    METOIS, JJ
    [J]. SURFACE SCIENCE, 1993, 291 (1-2) : 1 - 13
  • [3] Maskless selective area molecular beam epitaxy of semiconductors and metals using atomic step networks on silicon
    Finnie, P
    Homma, Y
    [J]. JOURNAL OF CRYSTAL GROWTH, 1999, 201 : 604 - 609
  • [4] Surface phase diagrams for the Ag-Ge(111) and Au-Si(111) systems
    Grozea, D
    Bengu, E
    Marks, LD
    [J]. SURFACE SCIENCE, 2000, 461 (1-3) : 23 - 30
  • [5] Spatial variation of Au coverage as the driving force for nanoscopic pattern formation
    Heringdorf, FJMZ
    Schmidt, T
    Heun, S
    Hild, R
    Zahl, P
    Ressel, B
    Bauer, E
    Horn-von Hoegen, M
    [J]. PHYSICAL REVIEW LETTERS, 2001, 86 (22) : 5088 - 5091
  • [6] SECONDARY-ELECTRON IMAGING OF MONOLAYER STEPS ON A CLEAN SI(111) SURFACE
    HOMMA, Y
    TOMITA, M
    HAYASHI, T
    [J]. SURFACE SCIENCE, 1991, 258 (1-3) : 147 - 152
  • [7] Aligned island formation using an array of step bands and holes on Si(111)
    Homma, Y
    Finnie, P
    Ogino, T
    [J]. APPLIED PHYSICS LETTERS, 1999, 74 (06) : 815 - 817
  • [8] Aligned island formation using step-band networks on Si(111)
    Homma, Y
    Finnie, P
    Ogino, T
    Noda, H
    Urisu, T
    [J]. JOURNAL OF APPLIED PHYSICS, 1999, 86 (06) : 3083 - 3088
  • [9] ATOMIC CONFIGURATION DEPENDENT SECONDARY-ELECTRON EMISSION FROM RECONSTRUCTED SILICON SURFACES
    HOMMA, Y
    SUZUKI, M
    TOMITA, M
    [J]. APPLIED PHYSICS LETTERS, 1993, 62 (25) : 3276 - 3278
  • [10] Control of island formation on silicon surfaces using ultra-high-vacuum scanning electron microscopy
    Homma, Y
    Finnie, P
    Ogino, T
    [J]. JOURNAL OF ELECTRON MICROSCOPY, 2000, 49 (02) : 225 - 229