Reinvestigation of the Ni/Si interface: Spectromicroscopic evidence for multiple silicide phases

被引:20
作者
Gregoratti, L [1 ]
Gunther, S [1 ]
Kovac, J [1 ]
Casalis, L [1 ]
Marsi, M [1 ]
Kiskinova, M [1 ]
机构
[1] Sincrotrone Trieste, I-34012 Trieste, Italy
来源
PHYSICAL REVIEW B | 1998年 / 57卷 / 12期
关键词
D O I
10.1103/PhysRevB.57.R6799
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Using photoelectron spectromicroscopy we identified the chemical composition of several phases on a morphologically complex interface formed after segregation of dissolved Ni onto the Si(111) surface. Unexpectedly, coexistence of two types of micrometer-sized silicide islands with composition and electronic structure close to NiSi2 and NiSi phases was found. This finding revises some of the previous schemes about the evolution of the Ni/Si(111) system at high temperatures, which were based exclusively on structural analyses. A formation mechanism supposing anisotropy of the nucleation barrier far disilicide formation is suggested in order to explain the presence of NiSi islands and the preferred [110] orientation of the NiSi2 islands.
引用
收藏
页码:R6799 / R6802
页数:4
相关论文
共 20 条
[1]   SURFACE PHASE-TRANSFORMATIONS IN THE NI/SI(111) SYSTEM OBSERVED IN REAL-TIME USING LOW-ENERGY-ELECTRON MICROSCOPY [J].
BENNETT, PA ;
LEE, MY ;
PARIKH, SA ;
WURM, K ;
PHANEUF, RJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1995, 13 (03) :1728-1732
[2]   ATOMIC-STRUCTURE OF COBALT SILICIDE ISLANDS FORMED BY REACTIVE EPITAXY [J].
BENNETT, PA ;
PARIKH, SA ;
LEE, MY ;
CAHILL, DG .
SURFACE SCIENCE, 1994, 312 (03) :377-386
[3]   THE INITIAL-STAGES OF NISI2 EPITAXY ON CLEAN SI(111), SI(100) AND SI(110) SURFACES [J].
DOLBAK, AE ;
OLSHANETSKY, BZ ;
STENIN, SI ;
TEYS, SA ;
GAVRILOVA, TA .
SURFACE SCIENCE, 1991, 247 (01) :32-42
[4]   ELECTRONIC-STRUCTURE OF NICKEL SILICIDES NI2SI, NISI, AND NISI2 [J].
FRANCIOSI, A ;
WEAVER, JH ;
SCHMIDT, FA .
PHYSICAL REVIEW B, 1982, 26 (02) :546-553
[5]  
GREGORATTI L, UNPUB
[6]   Au on Ag/Si(111)-(root 3x root 3)R30 degrees: A spectromicroscopy study of a bimetal-silicon interface [J].
Gunther, S ;
Kolmakov, A ;
Kovac, J ;
Marsi, M ;
Kiskinova, M .
PHYSICAL REVIEW B, 1997, 56 (08) :5003-5013
[7]  
Himpsel F. J., 1990, CORE LEVEL SPECTROSC, P203
[8]   EVIDENCE FOR SI DIFFUSION THROUGH EPITAXIAL NISI2 GROWN ON SI(111) [J].
HINKEL, V ;
SORBA, L ;
HAAK, H ;
HORN, K ;
BRAUN, W .
APPLIED PHYSICS LETTERS, 1987, 50 (18) :1257-1259
[9]   Microstructural characterization of ordered nickel silicide structures grown on (111) nickel silicide films [J].
Ho, HL ;
Bauer, CL ;
Mahajan, S ;
Laughlin, DE ;
Milnes, AG .
JOURNAL OF MATERIALS RESEARCH, 1996, 11 (04) :904-911
[10]  
JAO T, 1996, APPL SURF SCI, V104, P213