SURFACE PHASE-TRANSFORMATIONS IN THE NI/SI(111) SYSTEM OBSERVED IN REAL-TIME USING LOW-ENERGY-ELECTRON MICROSCOPY

被引：24

作者：

BENNETT, PA

LEE, MY

PARIKH, SA

WURM, K

PHANEUF, RJ

机构：

[1] ARIZONA STATE UNIV,DEPT MAT SCI,TEMPE,AZ 85287

[2] TECH UNIV CLAUSTHAL,INST PHYS,W-3392 CLAUSTHAL ZELLERFE,GERMANY

[3] UNIV MARYLAND,DEPT PHYS,COLLEGE PK,MD 20742

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1995年 / 13卷 / 03期

关键词：

D O I：

10.1116/1.579759

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1728 / 1732

页数：5

共 27 条

[1] EFFECTS OF SURFACE-DEFECTS ON THE ORIENTATION OF NISI2 FORMED ON SI (111) SUBSTRATES [J].

AKINCI, G ;

OHNO, T ;

WILLIAMS, ED .

APPLIED PHYSICS LETTERS, 1987, 50 (12) :754-756

[2] THE RESOLUTION OF THE LOW-ENERGY ELECTRON REFLECTION MICROSCOPE [J].

BAUER, E .

ULTRAMICROSCOPY, 1985, 17 (01) :51-56

[3] RING CLUSTERS IN TRANSITION-METAL SILICON SURFACE-STRUCTURES [J].

BENNETT, PA ;

COPEL, M ;

CAHILL, DG ;

FALTA, J ;

TROMP, RM .

PHYSICAL REVIEW LETTERS, 1992, 69 (08) :1224-1227

[4] THE SI(111) 7X7 TO 1X1 TRANSITION [J].

BENNETT, PA ;

WEBB, MW .

SURFACE SCIENCE, 1981, 104 (01) :74-104

[5] ATOMIC-STRUCTURE OF COBALT SILICIDE ISLANDS FORMED BY REACTIVE EPITAXY [J].

BENNETT, PA ;

PARIKH, SA ;

LEE, MY ;

CAHILL, DG .

SURFACE SCIENCE, 1994, 312 (03) :377-386

[6] SCANNING-TUNNELING-MICROSCOPY STUDIES OF NUCLEATION AND GROWTH IN A REACTIVE, EPITAXIAL SYSTEM - CO/SI(111) [J].

BENNETT, PA ;

PARIKH, SA ;

CAHILL, DG .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1993, 11 (04) :1680-1685

[7] INTERSTITIAL PRECURSOR TO SILICIDE FORMATION ON SI(111)-(7X7) [J].

BENNETT, PA ;

CAHILL, DG ;

COPEL, M .

PHYSICAL REVIEW LETTERS, 1994, 73 (03) :452-455

[8]

BENNETT PA, 1994, MATER RES SOC SYMP P, V320, P239

[9]

CHNELIK D, 1989, OPTIK, V83, P155

[10] LEED INVESTIGATIONS ON THE INTERACTION OF PD AND NI WITH DIFFERENT SI(111) SURFACES [J].

CLABES, JG .

SURFACE SCIENCE, 1984, 145 (01) :87-100

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