LEED INVESTIGATIONS ON THE INTERACTION OF PD AND NI WITH DIFFERENT SI(111) SURFACES

被引：55

作者：

CLABES, JG ^{[1
]}

机构：

[1] UNIV HANOVER,INST FESTKORPERPHYS,D-3000 HANOVER,FED REP GER

来源：

SURFACE SCIENCE | 1984年 / 145卷 / 01期

关键词：

D O I：

10.1016/0039-6028(84)90767-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：87 / 100

页数：14

共 55 条

[1] COOLING EFFECT ON THE ELECTRON-STATES OF SI(III)-PD AND SI(III)-PT INTERFACES [J].

ABBATI, I ;

BRAICOVICH, L ;

DEMICHELIS, B ;

DELPENNINO, U ;

VALERI, S .

SOLID STATE COMMUNICATIONS, 1980, 35 (12) :917-920

[2] SILICON METAL SILICIDE HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J].

BEAN, JC ;

POATE, JM .

APPLIED PHYSICS LETTERS, 1980, 37 (07) :643-646

[3] 7X7 RECONSTRUCTION ON SI(111) RESOLVED IN REAL SPACE [J].

BINNIG, G ;

ROHRER, H ;

GERBER, C ;

WEIBEL, E .

PHYSICAL REVIEW LETTERS, 1983, 50 (02) :120-123

[4] TRANSITION-METAL SILICIDES - ASPECTS OF THE CHEMICAL-BOND AND TRENDS IN THE ELECTRONIC-STRUCTURE [J].

BISI, O ;

CALANDRA, C .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1981, 14 (35) :5479-5494

[5]

BOWER RW, 1973, SOLID STATE ELECTRON, V16, P1461, DOI 10.1016/0038-1101(73)90063-4

[6] STRUCTURE AND ELECTRICAL CHARACTERISTICS OF EPITAXIAL PALLADIUM SILICIDE CONTACTS ON SINGLE-CRYSTAL SILICON AND DIFFUSED P-N DIODES [J].

BUCKLEY, WD ;

MOSS, SC .

SOLID-STATE ELECTRONICS, 1972, 15 (12) :1331-&

[7] NATURE OF THE SI(111)7X7 RECONSTRUCTION [J].

CARDILLO, MJ .

PHYSICAL REVIEW B, 1981, 23 (08) :4279-4282

[8] ATOMIC AND ELECTRONIC-STRUCTURE OF THE 7X7 RECONSTRUCTED SI(111) SURFACE [J].

CHADI, DJ ;

BAUER, RS ;

WILLIAMS, RH ;

HANSSON, GV ;

BACHRACH, RZ ;

MIKKELSEN, JC ;

HOUZAY, F ;

GUICHAR, GM ;

PINCHAUX, R ;

PETROFF, Y .

PHYSICAL REVIEW LETTERS, 1980, 44 (12) :799-802

[9] 1ST PHASE NICKEL SILICIDE NUCLEATION AND INTERFACE STRUCTURE AT SI(100) SURFACES [J].

CHANG, YJ ;

ERSKINE, JL .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02) :1193-1197

[10] DIFFUSION-LAYER MICROSTRUCTURE OF NI ON SI(100) [J].

CHANG, YJ ;

ERSKINE, JL .

PHYSICAL REVIEW B, 1982, 26 (08) :4766-4769

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