Surface transfer hole doping of epitaxial graphene using MoO3 thin film

被引：136

作者：

Chen, Zhenyu ^{[1
,2
]}

Santoso, Iman ^{[1
,3
]}

Wang, Rui ^{[4
]}

Xie, Lan Fei ^{[4
]}

Mao, Hong Ying ^{[1
]}

Huang, Han ^{[4
]}

Wang, Yu Zhan ^{[4
]}

Gao, Xing Yu ^{[1
]}

Chen, Zhi Kuan ^{[5
]}

Ma, Dongge ^{[2
]}

Wee, Andrew Thye Shen ^{[4
]}

Chen, Wei ^{[1
,4
]}

机构：

[1] Natl Univ Singapore, Dept Chem, Singapore 117543, Singapore

[2] Chinese Acad Sci, Changchun Inst Appl Chem, State Key Lab Polymer Phys & Chem, Changchun 130022, Peoples R China

[3] Univ Gadjah Mada, Jurusan Fis, Yogyakarta, Indonesia

[4] Natl Univ Singapore, Dept Phys, Singapore 117542, Singapore

[5] Inst Mat Res & Engn, Singapore 117602, Singapore

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 21期

基金：

美国国家科学基金会;

关键词：

ELECTRONIC-STRUCTURE; OXIDES; 6H-SIC(0001);

D O I：

10.1063/1.3441263

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Synchrotron-based in situ photoelectron spectroscopy investigations demonstrate effective surface transfer p-type doping of epitaxial graphene (EG) thermally grown on 4H-SiC(0001) via the deposition of MoO3 thin film on top. The large work function difference between EG and MoO3 facilitates electron transfer from EG to the MoO3 thin film. This leads to hole accumulation in the EG layer with an areal hole density of about 1.0x10(13) cm(-2), and places the Fermi level 0.38 eV below the graphene Dirac point. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3441263]

引用

页数：3

共 21 条

[1] Electronic confinement and coherence in patterned epitaxial graphene [J].

Berger, Claire ;

Song, Zhimin ;

Li, Xuebin ;

Wu, Xiaosong ;

Brown, Nate ;

Naud, Cecile ;

Mayou, Didier ;

Li, Tianbo ;

Hass, Joanna ;

Marchenkov, Atexei N. ;

Conrad, Edward H. ;

First, Phillip N. ;

de Heer, Wait A. .

SCIENCE, 2006, 312 (5777) :1191-1196

[2] The electronic properties of graphene [J].

Castro Neto, A. H. ;

Guinea, F. ;

Peres, N. M. R. ;

Novoselov, K. S. ;

Geim, A. K. .

REVIEWS OF MODERN PHYSICS, 2009, 81 (01) :109-162

[3] Atomic structure of the 6H-SiC(0001) nanomesh [J].

Chen, W ;

Xu, H ;

Liu, L ;

Gao, XY ;

Qi, DC ;

Peng, GW ;

Tan, SC ;

Feng, YP ;

Loh, KP ;

Wee, ATS .

SURFACE SCIENCE, 2005, 596 (1-3) :176-186

[4] Surface transfer p-type doping of epitaxial graphene [J].

Chen, Wei ;

Chen, Shi ;

Qi, Dong Chen ;

Gao, Xing Yu ;

Wee, Andrew Thye Shen .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2007, 129 (34) :10418-10422

[5] Surface transfer doping of semiconductors [J].

Chen, Wei ;

Qi, Dongchen ;

Gao, Xingyu ;

Wee, Andrew Thye Shen .

PROGRESS IN SURFACE SCIENCE, 2009, 84 (9-10) :279-321

[6] XPS study of as-prepared and reduced molybdenum oxides [J].

Choi, JG ;

Thompson, LT .

APPLIED SURFACE SCIENCE, 1996, 93 (02) :143-149

[7]

Emtsev KV, 2009, NAT MATER, V8, P203, DOI [10.1038/nmat2382, 10.1038/NMAT2382]

[8] The rise of graphene [J].

Geim, A. K. ;

Novoselov, K. S. .

NATURE MATERIALS, 2007, 6 (03) :183-191

[9] Graphene: Status and Prospects [J].

Geim, A. K. .

SCIENCE, 2009, 324 (5934) :1530-1534

[10] Atomic Hole Doping of Graphene [J].

Gierz, Isabella ;

Riedl, Christian ;

Starke, Ulrich ;

Ast, Christian R. ;

Kern, Klaus .

NANO LETTERS, 2008, 8 (12) :4603-4607

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