SU-8: a photoresist for high-aspect-ratio and 3D submicron lithography

被引：630

作者：

del Campo, A. ^{[1
]}

Greiner, C. ^{[1
]}

机构：

[1] Max Planck Inst Met Res, D-70569 Stuttgart, Germany

来源：

JOURNAL OF MICROMECHANICS AND MICROENGINEERING | 2007年 / 17卷 / 06期

关键词：

D O I：

10.1088/0960-1317/17/6/R01

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

SU- 8 has become the favourite photoresist for high- aspect- ratio ( HAR) and three- dimensional ( 3D) lithographic patterning due to its excellent coating, planarization and processing properties as well as its mechanical and chemical stability. However, as feature sizes get smaller and pattern complexity increases, particular difficulties and a number of material- related issues arise and need to be carefully considered. This review presents a detailed description of these effects and describes reported strategies and achieved SU- 8 HAR and 3D structures up to August 2006.

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页码：R81 / R95

页数：15

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