Reduction of radiation induced back channel threshold voltage shifts in partially depleted SIMOX CMOS devices by using ADVANTOX™ substrates

被引：19

作者：

Liu, ST ^{[1
]}

Allen, LP

Anc, MJ

Jenkins, WC

Hughes, HL

Twigg, ME

Lawrence, RK

机构：

[1] Honeywell Inc, Plymouth, MN 55441 USA

[2] IBIS Technol Corp, Danvers, MA 01923 USA

[3] USN, Res Lab, Washington, DC 20375 USA

[4] ARACOR, Sunnyvale, CA 94086 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1997年 / 44卷 / 06期

关键词：

D O I：

10.1109/23.659024

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Excessive total dose radiation induced back channel threshold voltage shifts often observed in fully depleted and partially depleted NMOS transistors fabricated in full dose SIMOX wafers can be greatly reduced by use of new low dose ADVANTOX(TM) substrates.

引用

页码：2101 / 2105

页数：5

共 9 条

[1]

ALLES M, 1994, P 6 INT S SIL ON INS, P459

[2] SOI: Materials to systems [J].

AubertonHerve, AJ .

IEDM - INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST 1996, 1996, :3-10

[3] MOSFET AND MOS CAPACITOR RESPONSES TO IONIZING-RADIATION [J].

BENEDETTO, JM ;

BOESCH, HE .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) :1461-1466

[4] POINT-CONTACT PSEUDO-MOSFET FOR INSITU CHARACTERIZATION OF AS-GROWN SILICON-ON-INSULATOR WAFERS [J].

CRISTOLOVEANU, S ;

WILLIAMS, S .

IEEE ELECTRON DEVICE LETTERS, 1992, 13 (02) :102-104

[5]

FLAMENT O, 1994, P 6 INT S SOI TECHN, P381

[6]

LIU ST, 1996, IEEE INT SOI C P, P46

[7]

LIU ST, 1991, J RAD EFFECTS RES EN, V10, P40

[8]

Matloubian M., 1992, Proceedings of the Fifth International Symposium on Silicon-on-Insulator Technology and Devices, P64

[9]

Smith J. H., 1992, Proceedings of the Fifth International Symposium on Silicon-on-Insulator Technology and Devices, P171

← 1 →