Experimental evidence for the quantum confinement effect in 3C-SiC nanocrystallites

被引:306
作者
Wu, XL [1 ]
Fan, JY
Qiu, T
Yang, X
Siu, GG
Chu, PK
机构
[1] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China
[2] Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China
[3] City Univ Hong Kong, Dept Phys & Mat Sci, Hong Kong, Hong Kong, Peoples R China
关键词
D O I
10.1103/PhysRevLett.94.026102
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Using electrochemical etching of a polycrystalline 3C-SiC target and subsequent ultrasonic treatment in water solution, we have fabricated suspensions of 3C-SiC nanocrystallites that luminesce. Transmission electron microscope observations show that the 3C-SiC nanocrystallites, which uniformly disperse in water, have sizes in the range of 1-6 nm. Photoluminescence and photoluminescence excitation spectral examinations show clear evidence for the quantum confinement of 3C-SiC nanocrystallites with the emission band maximum ranging from 440 to 560 nm. Tunable, composite polystyrene/SiC film can be made by adding polystyrene to a toluene suspension of the 3C-SiC nanocrystallites and then coating the resulting solution onto a Si wafer.
引用
收藏
页码:1 / 4
页数:4
相关论文
共 30 条
[2]   SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].
CANHAM, LT .
APPLIED PHYSICS LETTERS, 1990, 57 (10) :1046-1048
[3]   Quantum size effects on exciton states in indirect-gap quantum dots [J].
Feng, DH ;
Xu, ZZ ;
Jia, TQ ;
Li, XX ;
Gong, SQ .
PHYSICAL REVIEW B, 2003, 68 (03)
[4]   On some modern uses of the electron in logic and memory [J].
Fowler, A .
PHYSICS TODAY, 1997, 50 (10) :50-54
[5]   LUMINESCENT COLLOIDAL SILICON SUSPENSIONS FROM POROUS SILICON [J].
HEINRICH, JL ;
CURTIS, CL ;
CREDO, GM ;
KAVANAGH, KL ;
SAILOR, MJ .
SCIENCE, 1992, 255 (5040) :66-68
[6]   Silicon-based visible light-emitting devices integrated into microelectronic circuits [J].
Hirschman, KD ;
Tsybeskov, L ;
Duttagupta, SP ;
Fauchet, PM .
NATURE, 1996, 384 (6607) :338-341
[7]   SITE EFFECT ON THE IMPURITY LEVELS IN H-4, 6H, AND 15R SIC [J].
IKEDA, M ;
MATSUNAMI, H ;
TANAKA, T .
PHYSICAL REVIEW B, 1980, 22 (06) :2842-2854
[8]  
JEPPS NW, 1983, CRYSTAL GROWTH CHARA, V7
[9]   MICROSTRUCTURE AND OPTICAL-PROPERTIES OF FREESTANDING POROUS SILICON FILMS - SIZE DEPENDENCE OF ABSORPTION-SPECTRA IN SI NANOMETER-SIZED CRYSTALLITES [J].
KANEMITSU, Y ;
UTO, H ;
MASUMOTO, Y ;
MATSUMOTO, T ;
FUTAGI, T ;
MIMURA, H .
PHYSICAL REVIEW B, 1993, 48 (04) :2827-2830
[10]   Photoluminescence features on the Raman spectra of quasistoichiometric SiC nanoparticles:: Experimental and numerical simulations -: art. no. 155317 [J].
Kassiba, A ;
Makowska-Janusik, M ;
Bouclé, J ;
Bardeau, JF ;
Bulou, A ;
Herlin-Boime, N .
PHYSICAL REVIEW B, 2002, 66 (15) :1-7