Coprecipitation method for the preparation of nanocrystalline ferroelectric CaBi2Ta2O9

被引:31
作者
Gaikwad, SP
Dhesphande, SB
Khollam, YB
Samuel, V
Ravi, V
机构
[1] Natl Chem Lab, Phys & Mat Chem Div, Pune 411008, Maharashtra, India
[2] Natl Chem Lab, Catalysis Div, Pune 411008, Maharashtra, India
关键词
ceramics; electronic material; oxides; chemical synthesis; ferroelectricity;
D O I
10.1016/j.matlet.2004.07.004
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A simple coprecipitation technique had been successfully applied for the preparation of pure ultrafine single-phase CaBi2Ta2O9(CBT). Ammonium hydroxide and ammonium oxalate were used to precipitate Ca2+, Bi3+ and Ta5+ cations simultaneously. No pyrochlore phase was found while heating powder at 800 degreesC and pure CaBi2Ta2O9 phase was found to be formed by XRD. Particle size and morphology was studied by transmission electron microscopy (TEM). The room temperature dielectric constant at 1 kHz is 100. The ferroelectric hysteresis loop parameters of these samples were also studied. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:3474 / 3476
页数:3
相关论文
共 14 条
[1]  
AURIVILLIUS B, 1949, ARK KEMI, V0001
[2]   Study of pulsed laser ablated CaBi2Ta2O9 thin films [J].
Das, RR ;
Pérez, W ;
Katiyar, RS ;
Krupanidhi, SB .
SOLID STATE COMMUNICATIONS, 2001, 119 (03) :127-131
[3]   Co-precipitation technique for the preparation of nanocrystalline ferroelectric SrBi2Ta2O9 [J].
Dhage, SR ;
Khollam, YB ;
Deshpande, SB ;
Ravi, V .
MATERIALS RESEARCH BULLETIN, 2003, 38 (11-12) :1601-1605
[4]   Preparation of microwave dielectric, Sn0.2Zr0.8TiO4 [J].
Dhage, SR ;
Ravi, V ;
Date, SK .
BULLETIN OF MATERIALS SCIENCE, 2003, 26 (02) :215-216
[5]   Ferroelectric properties of alkoxy-derived CaBi2Ta2O9 thin films [J].
Kato, K ;
Suzuki, K ;
Nishizawa, K ;
Miki, T .
JOURNAL OF APPLIED PHYSICS, 2000, 88 (06) :3779-3780
[6]   Cation disorder in the ferroelectric oxides ABi2Ta2O9, A = Ca, Sr, Ba [J].
Macquart, R ;
Kennedy, BJ ;
Shimakawa, Y .
JOURNAL OF SOLID STATE CHEMISTRY, 2001, 160 (01) :174-177
[7]   Rochelle salt as a dielectric [J].
Sawyer, CB ;
Tower, CH .
PHYSICAL REVIEW, 1930, 35 (03) :0269-0273
[8]   FERROELECTRIC MEMORIES [J].
SCOTT, JF ;
DEARAUJO, CAP .
SCIENCE, 1989, 246 (4936) :1400-1405
[9]   Structure and device characteristics of SrBi2Ta2O9-based nonvolatile random-access memories [J].
Scott, JF ;
Ross, FM ;
deAraujo, CAP ;
Scott, MC ;
Huffman, M .
MRS BULLETIN, 1996, 21 (07) :33-39
[10]   Degradation of ferroelectric SrBi2Ta2O9 materials under reducing conditions and their reaction with Pt electrodes [J].
Shimakawa, Y ;
Kubo, Y .
APPLIED PHYSICS LETTERS, 1999, 75 (18) :2839-2841