Fabrication and electrical properties of LaNiO3/Pb(Zr0.61Ti0.39)O3/LaNiO3/LaAlO3 all-perovskite heterostructures

被引:3
作者
Zhang, ST
Tan, WS
Yuan, GL
Zhang, XJ
Cheng, HW
Chen, YF [1 ]
Liu, ZG
Ming, NB
机构
[1] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China
[2] Nanjing Univ, Dept Mat Sci & Engn, Nanjing 210093, Peoples R China
[3] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China
[4] Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China
关键词
Pb(Zr; Ti)O-3; LaNiO3; heterostructure; AFM; XPS; hysteresis loop;
D O I
10.1016/S0167-9317(02)00987-5
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
All-perovskite heterostructures of LaNiO3(LNO)/Pb(Zr0.61Ti0.39)O-3(PZT)/LNO were fabricated on (001)-LaAlO3. (LAO) single crystal substrates by pulsed laser deposition (PLD). The structures of both LNO/LAO and LNO/PZT/LNO/LAO were characterized by X-ray diffraction (XRD) and atomic force microscopy (AFM). The Zr:Ti ratio and the surface oxygen ions of the PZT films were analyzed by X-ray photoelectron spectroscopy (XPS) in detail. The XPS peak corresponding to lattice oxygen ions showed obvious asymmetry, which indicated the different binding energy of Ti-O and Pb/Zr-O bonds. The PZT films showed a square hysteresis loop with remnant polarization (P-r) and saturated polarization (P-s) of 13.8 muC/cm(2) and 31.5 muC/cm(2), respectively. Good saturation property with the increase of applied electrical field was exhibited. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:701 / 707
页数:7
相关论文
共 16 条
[1]  
[Anonymous], 1979, HDB XPS
[2]   Improved electrical properties of (Pb, La)TiO3 thin films using compositionally and structurally compatible LaNiO3 thin films as bottom electrodes [J].
Bao, DH ;
Wakiya, N ;
Shinozaki, K ;
Mizutani, N ;
Yao, X .
APPLIED PHYSICS LETTERS, 2001, 78 (21) :3286-3288
[3]   Influence of texture on the switching behavior of Pb(Zr0.70Ti0.30)O-3 sol-gel derived thin films [J].
Brooks, KG ;
Klissurska, RD ;
Moeckli, P ;
Setter, N .
JOURNAL OF MATERIALS RESEARCH, 1997, 12 (02) :531-540
[4]   Low temperature synthesis and electrical properties of epitaxial Sr0.8Bi2.2Ta2O9 thin films [J].
Chattopadhyay, S ;
Kvit, A ;
Kumar, D ;
Sharma, AK ;
Sankar, J ;
Narayan, J ;
Knight, VS ;
Coleman, TS ;
Lee, CB .
APPLIED PHYSICS LETTERS, 2001, 78 (22) :3514-3516
[5]   X-ray photoelectron spectroscopy and high resolution electron microscopy studies of Aurivillius compounds:: Bi4-xLaxTi3O12(x=0, 0.5, 0.75, 1.0, 1.5, and 2.0) [J].
Chu, MW ;
Ganne, M ;
Caldes, MT ;
Brohan, L .
JOURNAL OF APPLIED PHYSICS, 2002, 91 (05) :3178-3187
[6]   ORIGIN OF FERROELECTRICITY IN PEROVSKITE OXIDES [J].
COHEN, RE .
NATURE, 1992, 358 (6382) :136-138
[7]   FERROELECTRIC MEMORIES [J].
DEARAUJO, CAP ;
MCMILLAN, LD ;
MELNICK, BM ;
CUCHIARO, JD ;
SCOTT, JF .
FERROELECTRICS, 1990, 104 :241-256
[8]   FERROELECTRIC THIN-FILMS FOR ELECTRONIC APPLICATIONS [J].
HAERTLING, GH .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1991, 9 (03) :414-420
[9]   LANIO3 - A STUDY BY ELECTRON-SPECTROSCOPY [J].
KEMP, JP ;
COX, PA .
SOLID STATE COMMUNICATIONS, 1990, 75 (09) :731-735
[10]   Improvement of (Pb1-xLax)(ZryTi1-y)1-x/4O3 ferroelectric thin films by use of SrRuO3/Ru/Pt/Ti bottom electrodes [J].
Liu, KS ;
Tseng, TF ;
Lin, IN .
APPLIED PHYSICS LETTERS, 1998, 72 (10) :1182-1184