4H-SiC gate turn-off (GTO) thyristor development

被引：4

作者：

Casady, JB

Agarwal, AK

Rowland, LB

Siergiej, RR

Seshadri, S

Mani, S

Barrows, J

Piccone, D

Sanger, PA

Brandt, CD

机构：

[1] Northrop Grumman Sci & Technol Ctr, Pittsburgh, PA 15235 USA

[2] Silicon Power Corp, Malvern, PA 19355 USA

来源：

SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2 | 1998年 / 264-2卷

关键词：

thyristor; GTO; power switching; rectifier; power electronics; high temperature;

D O I：

10.4028/www.scientific.net/MSF.264-268.1069

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

4H-SiC inverted, asymmetrical gate turn-off thyristors (GTOs) were fabricated and characterized over an ambient temperature range of 25 degrees C to 390 degrees C. Device performance was evaluated with respect to forward drop, current density, and blocking voltage. At room temperature, forward blocking voltages of up to 1000 V were achieved in smaller area devices (6.5x10(-4) cm(2) active area) while larger area devices (3.63x10(-3) cm(2) active area) could block up to 700 V. Reverse blocking was approximately 50 V for these asymmetrical devices. Current densities were evaluated up to 3500A/cm(2), with the forward voltage drop strongly affected by temperature and anode contact resistance.

引用

页码：1069 / 1072

页数：4

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