Synthesis of pseudobinary Cr-Al-N films with B1 structure by rf-assisted magnetron sputtering method

被引：140

作者：

Makino, Y ^{[1
]}

Nogi, K ^{[1
]}

机构：

[1] Osaka Univ, Joining & Welding Res Inst, Osaka 567, Japan

来源：

SURFACE & COATINGS TECHNOLOGY | 1998年 / 98卷 / 1-3期

关键词：

D O I：

10.1016/S0257-8972(97)00391-5

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Pseudobinary Cr-Al-N films were synthesized by a new inductively combined rf-plasma assisted magnetron sputtering method. It was found that phase transition from B1 (NaCl) structure to B4 (wurtzite) structure occurs at an AIN content between 70 mol% and 80 mol%, and the critical composition for the phase transition showed excellent agreement with the composition (77 mol% AIN) predicted by two band parameters. It was found that the aging effect is observed in the pseudobinary nitride films synthesized by the new magnetron sputtering method. No preferred orientation was observed in as-deposited pseudobinary nitride films with B1 structure, while preferred orientation appeared in these films after aging at room temperature for six months. (C) 1998 Elsevier Science S.A.

引用

页码：1008 / 1012

页数：5

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