Grain-boundary-limited transport in semiconducting SnO2 thin films:: Model and experiments

被引：67

作者：

Prins, MWJ ^{[1
]}

Grosse-Holz, KO ^{[1
]}

Cillessen, JFM ^{[1
]}

Feiner, LF ^{[1
]}

机构：

[1] Philips Res Labs, NL-5656 AA Eindhoven, Netherlands

来源：

JOURNAL OF APPLIED PHYSICS | 1998年 / 83卷 / 02期

关键词：

D O I：

10.1063/1.366773

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present a model that describes grain-boundary-limited conduction in polycrystalline semiconductors, for thermally assisted ballistic as well as diffusive transport, both for degenerate and nondegenerate doping. In addition to bulk parameters (the carrier effective mass and mean free path) the model contains grain boundary parameters (barrier height and width) and a coefficient of current nonuniformity. Temperature-dependent conductivity and Hall measurements on polycrystalline SnO2 thin films with different Sb concentrations are consistently interpreted. (C) 1998 American Institute of Physics. [S0021-8979(98)01302-4].

引用

页码：888 / 893

页数：6

共 17 条

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