Growth of dislocation-free ZnSe single crystal by CVT method

ZnSe single crystals with a diameter of 12 mm and a length of 28 mm were grown by the CVT method using iodine as a transport agent. The ampoule wall, which has direct contact with the crystal during growth, was formed of pBN. The seed crystal, which was the CVT grown ZnSe single crystal with a reduced dislocation density (EPD) of less than 1 x 10(4) cm(-2), was used. The seed crystal was protected against thermal stress from the ampoule end wall by inserting the undoped polycrystalline ZnSe between the back of the seed crystal and the ampoule end wall. The EPD of the grown ZnSe crystal was less than 1 x 10(4) cm(-2) even near the seed crystal, and reduced to 0 at the tail part of the crystal. The shallow pits were found to exist on the etched surface of dislocation-free part. The dislocation-free part was annealed in Zn atmosphere, and crystallographic, electrical and optical characterizations were evaluated in relation to the annealing conditions. (C) 2000 Elsevier Science B.V. All rights reserved.