Doping behaviour of Si, Te, Zn and Mg in lattice-matched (GaIn)(NAs)/GaAs bulk films

In this study the electrical properties of the novel. metastable GaAs based material system (GaIn)(NAs) are examined. Lattice-matched (GaIn)(NAs) bulk-films are grown on GaAs substrates by metal organic vapour phase epitaxy. The doping behaviour of Si. Te, Zn and Mg is examined, The background carrier concentrations in the metastable material are reasonably low, in the order of 10(15)/cm(3) Controlled n- and p-type doping has been observed, in particular for Te and Mg. respectively, where electron and hole concentrations above 10(19),/cm' can be achieved with high mobility values of up to 2000cm(2)/V s for electrons and 200 cm(2)/V s for holes for low carrier concentrations. (C) Elsevier Science B.V, All rights reserved.