Electrical resistivity and morphology of ultra thin Pt films grown by dc magnetron sputtering on SiO2

被引：38

作者：

Agustsson, J. S. ^{[1
]}

Arnalds, U. B. ^{[2
]}

Ingason, A. S. ^{[3
]}

Gylfason, K. B. ^{[4
]}

Johnsen, K. ^{[1
]}

Olafsson, S. ^{[3
]}

Gudmundsson, J. T. ^{[3
,5
]}

机构：

[1] Mentis Cura, Grandagardi 7, Reykjavik, Iceland

[2] Matvice ehf, Reykjavik, Iceland

[3] Univ Iceland, Inst Sci, IS-107 Reykjavik, Iceland

[4] KTH Royal Inst Technol, Sch Elect Engn, Microsyst Technol Lab, Stockholm, Sweden

[5] Univ Iceland, Dept Elect & Comp Engn, IS-101 Reykjavik, Iceland

来源：

PROCEEDINGS OF THE 17TH INTERNATIONAL VACUUM CONGRESS/13TH INTERNATIONAL CONFERENCE ON SURFACE SCIENCE/INTERNATIONAL CONFERENCE ON NANOSCIENCE AND TECHNOLOGY | 2008年 / 100卷 / PART 8期

关键词：

D O I：

10.1088/1742-6596/100/8/082006

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Ultra thin platinum films were grown by dc magnetron sputtering on thermally oxidized Si (100) substrates. The electrical resistance of the films was monitored in-situ during growth. The coalescence thickness was determined for various growth temperatures and found to increase from 1.3 nm for films grown at room temperature to 1.8 nm for films grown at 250 degrees C, while a continuous film was formed at a thickness of 3.9 nm at room temperature and 3.5 nm at 250 degrees C. The electrical resistivity increases with increased growth temperature, as well as the morphological grain size, and the surface roughness, measured with a scanning tunneling microscope (STM).

引用

页数：4

共 15 条

[1] An externally cooled beetle type scanning tunneling microscope for imaging in cryogenic liquids [J].