Flexible hybrid complementary inverters with high gain and balanced noise margins using pentacene and amorphous InGaZnO thin-film transistors

被引：37

作者：

Kim, J. B. ^{[1
]}

Fuentes-Hernandez, C. ^{[1
]}

Kim, S. -J. ^{[1
]}

Choi, S. ^{[1
]}

Kippelen, B. ^{[1
]}

机构：

[1] Georgia Inst Technol, COPE, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

来源：

ORGANIC ELECTRONICS | 2010年 / 11卷 / 06期

基金：

美国国家科学基金会;

关键词：

Thin-film transistors; Complementary inverter; Pentacene; Indium gallium zinc oxide; Noise margin; ROOM-TEMPERATURE; OXIDE;

D O I：

10.1016/j.orgel.2010.03.008

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Hybrid organic-inorganic complementary inverters composed of pentacene and amorphous InGaZnO for p- and n-channel thin-film transistors (TFTs) were fabricated on flexible polyethersulfone substrates. The p- and n-channel TFTs showed saturation mobility values of 0.15 and 3.8 cm(2)/Vs, respectively. We propose a new method to find the switching threshold voltage and the optimum supply voltage of complementary inverters. With this method, we demonstrate hybrid complementary inverters that at a supply voltage of 25 V show a high gain of 130 V/V at a switching threshold voltage of 12.5 V. Operating these inverters at the ideal supply voltage leads to high and balanced noise margins with values of 84% of their theoretical maximum. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：1074 / 1078

页数：5

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