Optical characterization in the vacuum ultraviolet with variable angle spectroscopic ellipsometry: 157 nm and below

被引：11

作者：

Hilfiker, JN ^{[1
]}

Singh, B ^{[1
]}

Synowicki, RA ^{[1
]}

Bungay, CL ^{[1
]}

机构：

[1] JA Woollam Co Inc, Lincoln, NE 68508 USA

来源：

METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XIV | 2000年 / 3998卷

关键词：

157nm lithography; Spectroscopic Ellipsometry; VASE; Thin Film Characterization; Refractive Index; Vacuum Ultraviolet Metrology;

D O I：

10.1117/12.386495

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

As device feature sizes shrink below 0.18 mu m, shorter wavelength exposure tools are being investigated to meet the requirements for higher resolution. Understanding the optical properties of thin films and substrate materials at short wavelengths (193 nm, 157 nm, and shorter) will be necessary to develop the lithographic process. Variable Angle Spectroscopic Ellipsometry (VASE) offers nondestructive and precise measurement of thin film thickness and refractive index in the wavelength range from 146 nm to 1700 nm.(1) VASE measurements provide a complete description of the thin film optical properties, which can be used to track process changes or variations in sample structure. Recent hardware innovations have extended VASE into the vacuum ultraviolet to meet lithography requirements at 157 nm.(2).

引用

页码：390 / 398

页数：9

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