Electronic structure and magnetic properties of Al1-xMnxN alloys

被引:17
作者
de Paiva, R
Nogueira, RA
Alves, JLA
机构
[1] Univ Fed Minas Gerais, Dept Fis, BR-30123970 Belo Horizonte, MG, Brazil
[2] Univ Fed Sao Joao del Rei, Dept Ciencias Nat, BR-36301160 Sao Joao Del Rei, MG, Brazil
关键词
D O I
10.1063/1.1818351
中图分类号
O59 [应用物理学];
学科分类号
摘要
We apply a first-principles method based on the density functional theory within the local spin-density approximation, and the full-potential linear augmented plane-wave method, to calculate the electronic structure and magnetic properties of dilute magnetic Al1-xMnxN alloys in the zinc-blende phase. The analyses of the band structures, density of states, total energy, exchange interactions, and magnetic moments reveal that Al1-xMnxN alloys may exhibit half-metallic ferromagnetism, that the valence band is ferromagnetically coupled to the Mn atoms, and that the total magnetization of the cell is 4.0mu(B), which does not change with Mn concentration. (C) 2004 American Institute of Physics.
引用
收藏
页码:6565 / 6568
页数:4
相关论文
共 25 条
[1]  
Blaha P., 2001, WEIN2K AUGMENTED PLA
[2]   Spin interactions of interstitial Mn ions in ferromagnetic GaMnAs [J].
Blinowski, J ;
Kacman, P .
PHYSICAL REVIEW B, 2003, 67 (12) :4
[3]   Coupled quantum dots as quantum gates [J].
Burkard, G ;
Loss, D ;
DiVincenzo, DP .
PHYSICAL REVIEW B, 1999, 59 (03) :2070-2078
[4]   GROUND-STATE OF THE ELECTRON-GAS BY A STOCHASTIC METHOD [J].
CEPERLEY, DM ;
ALDER, BJ .
PHYSICAL REVIEW LETTERS, 1980, 45 (07) :566-569
[5]   Influence of disorder on ferromagnetism in diluted magnetic semiconductors [J].
Chudnovskiy, AL ;
Pfannkuche, D .
PHYSICAL REVIEW B, 2002, 65 (16) :1-7
[6]   ELECTRONIC ANALOG OF THE ELECTROOPTIC MODULATOR [J].
DATTA, S ;
DAS, B .
APPLIED PHYSICS LETTERS, 1990, 56 (07) :665-667
[7]   Self-compensation in manganese-doped ferromagnetic semiconductors [J].
Erwin, SC ;
Petukhov, AG .
PHYSICAL REVIEW LETTERS, 2002, 89 (22) :227201-227201
[8]   Indication of hysteresis in AlMnN [J].
Frazier, R ;
Thaler, G ;
Overberg, M ;
Gila, B ;
Abernathy, CR ;
Pearton, SJ .
APPLIED PHYSICS LETTERS, 2003, 83 (09) :1758-1760
[9]   Properties of Co-, Cr-, or Mn-implanted AIN [J].
Frazier, RM ;
Stapleton, J ;
Thaler, GT ;
Abernathy, CR ;
Pearton, SJ ;
Rairigh, R ;
Kelly, J ;
Hebard, AF ;
Nakarmi, ML ;
Nam, KB ;
Lin, JY ;
Jiang, HX ;
Zavada, JM ;
Wilson, RG .
JOURNAL OF APPLIED PHYSICS, 2003, 94 (03) :1592-1596
[10]   The Mn3+/2+ acceptor level in group III nitrides [J].
Graf, T ;
Gjukic, M ;
Brandt, MS ;
Stutzmann, M ;
Ambacher, O .
APPLIED PHYSICS LETTERS, 2002, 81 (27) :5159-5161