First principles study of the ferromagnetism in Ga1-xMnxAs semiconductors

被引:18
作者
da Silva, AJR
Fazzio, A
dos Santos, RR
Oliveira, LE
机构
[1] Univ Sao Paulo, Inst Fis, BR-05315970 Sao Paulo, SP, Brazil
[2] Univ Fed Rio de Janeiro, Inst Fis, BR-21945970 Rio De Janeiro, RJ, Brazil
[3] Univ Estadual Campinas, Inst Fis, BR-13083970 Campinas, SP, Brazil
关键词
D O I
10.1088/0953-8984/16/46/011
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We have performed ab initio calculations within the density-functional theory for Ga1-xMnxAs diluted semiconductors. Total energy results unambiguously show that a quasi-localized hole, with predominant p-like character, surrounds the fully polarized Mn up arrow d(5)-electrons. The calculations indicate that the holes form a relatively dispersionless impurity band, thus rendering effective-mass descriptions of hole states open to challenge. We obtain estimates both for the s = 1/2 hole and S = 5/2 Mn exchange coupling, and for the distance dependence of the effective Mn-Mn exchange interaction. The results demonstrate that the effective Mn-Mn coupling is always ferromagnetic, and thus non-RKKY, and is intermediated by the antiferromagnetic coupling of each Mn spin to the holes.
引用
收藏
页码:8243 / 8250
页数:8
相关论文
共 36 条
[1]   Theory of magnetic anisotropy in III1-xMnxV ferromagnets -: art. no. 054418 [J].
Abolfath, M ;
Jungwirth, T ;
Brum, J ;
MacDonald, AH .
PHYSICAL REVIEW B, 2001, 63 (05)
[2]   Photoemission studies of Ga1-xMnxAs:: Mn concentration dependent properties -: art. no. 115319 [J].
Åsklund, H ;
Ilver, L ;
Kanski, J ;
Sadowski, J ;
Mathieu, R .
PHYSICAL REVIEW B, 2002, 66 (11) :1153191-1153195
[3]   Ferromagnetism in diluted magnetic semiconductors:: A comparison between ab initio mean-field, RPA, and Monte Carlo treatments -: art. no. 081203 [J].
Bouzerar, G ;
Kudrnovsky, J ;
Bergqvist, L ;
Bruno, P .
PHYSICAL REVIEW B, 2003, 68 (08)
[4]   PHOTOEXCITATION AND PHOTOIONIZATION OF NEUTRAL MANGANESE ACCEPTORS IN GALLIUM ARSENIDE [J].
CHAPMAN, RA ;
HUTCHINSON, WG .
PHYSICAL REVIEW LETTERS, 1967, 18 (12) :443-+
[5]   Electronic structure and origin of ferromagnetism in Ga1-xMnxAs semiconductors [J].
da Silva, AJR ;
Fazzio, A ;
dos Santos, RR ;
Oliveira, LE .
PHYSICA B-CONDENSED MATTER, 2003, 340 :874-877
[6]   Free carrier-induced ferromagnetism in structures of diluted magnetic semiconductors [J].
Dietl, T ;
Haury, A ;
dAubigne, YM .
PHYSICAL REVIEW B, 1997, 55 (06) :R3347-R3350
[7]   Hole-mediated ferromagnetism in tetrahedrally coordinated semiconductors [J].
Dietl, T ;
Ohno, H ;
Matsukura, F .
PHYSICAL REVIEW B, 2001, 63 (19)
[8]   Magnetic-field effects in defect-controlled ferromagnetic Ga1-xMnxAs semiconductors [J].
dos Santos, RR ;
Castro, JDE ;
Oliveira, LE .
JOURNAL OF APPLIED PHYSICS, 2003, 93 (03) :1845-1847
[9]   Hole concentration in a diluted ferromagnetic semiconductor [J].
dos Santos, RR ;
Oliveira, LE ;
Castro, JDE .
JOURNAL OF PHYSICS-CONDENSED MATTER, 2002, 14 (14) :3751-3757
[10]   Hall effect and hole densities in Ga1-xMnxAs [J].
Edmonds, KW ;
Wang, KY ;
Campion, RP ;
Neumann, AC ;
Foxon, CT ;
Gallagher, BL ;
Main, PC .
APPLIED PHYSICS LETTERS, 2002, 81 (16) :3010-3012