Long- and short-period nanostructure formation on semiconductor surfaces at different ambient conditions

被引：32

作者：

Ganeev, R. A. ^{[1
,2
,3
]}

Baba, M. ^{[1
,4
]}

Ozaki, T. ^{[2
]}

Kuroda, H. ^{[1
,4
]}

机构：

[1] Univ Tokyo, Inst Solid State Phys, Chiba 2778581, Japan

[2] Ctr Energie Mat & Telecommun, Inst Natl Rech Sci, Varennes, PQ J3X 1S2, Canada

[3] Uzbek Acad Sci, Inst Elect, Tashkent 100125, Uzbekistan

[4] Saitama Med Univ, Fac Med, Iruma, Saitama 3500495, Japan

来源：

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS | 2010年 / 27卷 / 05期

关键词：

FEMTOSECOND LASER-ABLATION; DAMAGE; SILICON; FABRICATION; PULSES; SI;

D O I：

10.1364/JOSAB.27.001077

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We present the results of studies of nanoripples formation during interaction of the 800 nm, 120, and 35 fs pulses with semiconductor surfaces. Simultaneous appearance of the ripples with the period (700 nm) close to the wavelength of interacting radiation and considerably smaller period (180 nm) was achieved. We discuss the experimental conditions for the formation of these nanoripples (incidence angle, polarization, number of shots, etc.). We show a decisive role of surrounding medium on the quality of nanoripples formation. The self-organization of high-quality nanoripples was clearly shown in the case of dense surrounding medium ( methanol), while in the case of insufficient amount of surrounding material (i.e., at different vacuum conditions), the quality of ripples considerably decreased. (C) 2010 Optical Society of America

引用

页码：1077 / 1082

页数：6

共 22 条

[1] Optically produced arrays of planar nanostructures inside fused silica [J].

Bhardwaj, VR ;

Simova, E ;

Rajeev, PP ;

Hnatovsky, C ;

Taylor, RS ;

Rayner, DM ;

Corkum, PB .

PHYSICAL REVIEW LETTERS, 2006, 96 (05)

[2] SEMICONDUCTOR SURFACE DAMAGE PRODUCED BY RUBY LASERS [J].

BIRNBAUM, M .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (11) :3688-&

[3] Structure formation on the surface of indium phosphide irradiated by femtosecond laser pulses [J].

Bonse, J ;

Munz, M ;

Sturm, H .

JOURNAL OF APPLIED PHYSICS, 2005, 97 (01)

[4] Subwavelength ripple formation on the surfaces of compound semiconductors irradiated with femtosecond laser pulses [J].

Borowiec, A ;

Haugen, HK .

APPLIED PHYSICS LETTERS, 2003, 82 (25) :4462-4464

[5] Sub-damage-threshold femtosecond laser ablation from crystalline Si: surface nanostructures and phase transformation [J].

Costache, F ;

Kouteva-Arguirova, S ;

Reif, J .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2004, 79 (4-6) :1429-1432

[6] Sub-wavelength surface structures on silicon irradiated by femtosecond laser pulses at 1300 and 2100 nm wavelengths [J].

Crawford, T. H. R. ;

Haugen, H. K. .

APPLIED SURFACE SCIENCE, 2007, 253 (11) :4970-4977

[7] Femtosecond laser interaction with silicon under water confinement [J].

Daminelli, G ;

Krüger, J ;

Kautek, W .

THIN SOLID FILMS, 2004, 467 (1-2) :334-341

[8] Coulomb explosion-induced formation of highly oriented nanoparticles on thin films of 3C-SiC by the femtosecond pulsed laser [J].

Dong, YY ;

Molian, P .

APPLIED PHYSICS LETTERS, 2004, 84 (01) :10-12

[9] Internal structure and expansion dynamics of laser ablation plumes into ambient gases [J].

Harilal, SS ;

Bindhu, CV ;

Tillack, MS ;

Najmabadi, F ;

Gaeris, AC .

JOURNAL OF APPLIED PHYSICS, 2003, 93 (05) :2380-2388

[10] ZnSe nanowires grown on the crystal surface by femtosecond laser ablation in air [J].

Jia, T. Q. ;

Chen, H. X. ;

Huang, M. ;

Wu, X. J. ;

Zhao, F. L. ;

Baba, M. ;

Suzuki, M. ;

Kuroda, H. ;

Qiu, J. R. ;

Li, R. X. ;

Xu, Z. Z. .

APPLIED PHYSICS LETTERS, 2006, 89 (10)

← 1 2 3 →