Thermal shot noise in top-gated single carbon nanotube field effect transistors

被引：9

作者：

Chaste, J. ^{[1
]}

Pallecchi, E. ^{[1
]}

Morfin, P. ^{[1
]}

Feve, G. ^{[1
]}

Kontos, T. ^{[1
]}

Berroir, J. -M. ^{[1
]}

Hakonen, P. ^{[2
]}

Placais, B. ^{[1
]}

机构：

[1] Univ D Diderot, Univ Paris 06, CNRS, Lab Pierre Aigrain,Ecole Normale Super,UMR 8551, F-75231 Paris 05, France

[2] Aalto Univ, Low Temp Lab, FI-00076 Aalto, Finland

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 19期

关键词：

carbon nanotubes; field effect transistors; nanotube devices; shot noise; thermal noise;

D O I：

10.1063/1.3425889

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The high-frequency transconductance and current noise of top-gated single carbon nanotube transistors have been measured and used to investigate hot electron effects in one-dimensional transistors. Results are in good agreement with a theory of one-dimensional nanotransistor. In particular the prediction of a large transconductance correction to the Johnson-Nyquist thermal noise formula is confirmed experimentally. Experiment shows that nanotube transistors can be used as fast charge detectors for quantum coherent electronics with a resolution of 13 mu e/root Hz in the 0.2-0.8 GHz band. (C) 2010 American Institute of Physics. [doi:10.1063/1.3425889]

引用

页数：3

共 14 条

[1] Highly sensitive and broadband carbon nanotube radio-frequency single-electron transistor [J].