10-16 μm broadband quantum well infrared photodetector

被引：76

作者：

Bandara, SV ^{[1
]}

Gunapala, SD ^{[1
]}

Liu, JK ^{[1
]}

Luong, EM ^{[1
]}

Mumolo, JM ^{[1
]}

Hong, W ^{[1
]}

Sengupta, DK ^{[1
]}

McKelvey, MJ ^{[1
]}

机构：

[1] CALTECH, Jet Prop Lab, Ctr Space Microelect Technol, Pasadena, CA 91109 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 19期

关键词：

D O I：

10.1063/1.121375

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A very long wavelength broadband infrared detector, sensitive over a 10-16 mu m spectral range, based on GaAs/AlxGa1-xAs quantum wells grown by molecular beam epitaxy, has been demonstrated. Wavelength broadening of Delta lambda/lambda(p) similar to 42% is observed to be about a 400% increase compared to a typical bound-to-quasibound quantum well infrared photodetector (QWIP). In this device structure, which is different from typical QWIP device structures, two different gain mechanisms associated with photocurrent electrons and dark current electrons were observed and explained. Even with broader response, D*similar to 1 X 10(10) cm root Hz/W at T=55 K is comparable to regular QWIPs with similar cutoff wavelengths. [S0003-6951(98)01519-8].

引用

页码：2427 / 2429

页数：3

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