Diffusion of adsorbed Si dimers on Si(001)

被引：43

作者：

Krueger, M ^{[1
]}

Borovsky, B ^{[1
]}

Ganz, E ^{[1
]}

机构：

[1] UNIV MINNESOTA,DEPT PHYS,MINNEAPOLIS,MN 55455

来源：

SURFACE SCIENCE | 1997年 / 385卷 / 01期

基金：

美国国家科学基金会;

关键词：

epitaxy growth; models of surface kinetics; molecular dynamics; scanning tunneling microscopy; silicon; stepped single crystal surfaces; surface diffusion;

D O I：

10.1016/S0039-6028(97)00222-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The diffusion of adsorbed Si dimers on the Si(001)-2 x 1 surface is studied with hot scanning tunneling microscopy and a tracking technique in which each diffusive event is resolved. The activation energy for diffusion of a dimer along the top of a substrate dimer row is found to be 1.09+/-0.05 eV, with an attempt frequency of 10(13.2+/-0.6) Hz. A lower bound of 1.40 eV is placed on the activation energy for dimer dissociation. The free energy of a dimer is observed to decrease by 32+/-2 meV at a site adjacent to a type-A step. (C) 1997 Elsevier Science B.V.

引用

页码：146 / 154

页数：9

共 16 条

[1] BINDING AND DIFFUSION OF A SI ADATOM ON THE SI(100) SURFACE [J].