Some investigation results of the instability of humidity sensors based on alumina and porous silicon materials

被引:23
作者
Mai, LH [1 ]
Hoa, PTM [1 ]
Binh, NT [1 ]
Ha, NTT [1 ]
An, DK [1 ]
机构
[1] Natl Ctr Nat Sci & Technol, Inst Mat Sci, Dept Res & Dev Sensor, Hanoi, Vietnam
关键词
porous structure; porous silicon; alumina; humidity sensor;
D O I
10.1016/S0925-4005(99)00458-X
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
Alumina and porous silicon were prepared by the anodization method for humidity sensor fabrication. The humidity sensors, based on these materials, have the humidity sensitive range of 20% to 95% RH. The first experimental results showed that the conductivity and the instability of the sensors may depend on the porous structure and conductive mechanism of porous materials during reaction with water vapor. Raman Spectroscopy and thermal annealing were used to study the porous films. (C) 2000 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:63 / 65
页数:3
相关论文
共 6 条
[1]  
HOA PTM, 1996, THESIS HANOI VIET NA
[2]  
JACSON AC, 1967, HUMIDITY MEASUREMENT, V1, P304
[3]  
MAI LH, 1997, P 3 E AS C CHEM SENS, P454
[4]  
MAI LH, 1994, J SCI TECHNOLOGY VIE, V32, P205
[5]   CORRELATION BETWEEN PHOTOLUMINESCENCE AND SURFACE SPECIES IN POROUS SILICON - LOW-TEMPERATURE ANNEALING [J].
TSYBESKOV, L ;
FAUCHET, PM .
APPLIED PHYSICS LETTERS, 1994, 64 (15) :1983-1985
[6]   NATURAL OXIDATION OF ANNEALED CHEMICALLY ETCHED POROUS SILICON [J].
ZOUBIR, NH ;
VERGNAT, M ;
DELATOUR, T ;
BURNEAU, A ;
DEDONATO, P ;
BARRES, O .
THIN SOLID FILMS, 1995, 255 (1-2) :228-230