Highly crystallized as-grown smooth and superconducting MgB2 films by molecular-beam epitaxy

被引：52

作者：

van Erven, AJM ^{[1
]}

Kim, TH

Muenzenberg, M

Moodera, JS

机构：

[1] MIT, Francis Bitter Natl Magnet Lab, Cambridge, MA 02139 USA

[2] Eindhoven Univ Technol, Dept Appl Phys, Ctr Nanomat, NL-5600 MB Eindhoven, Netherlands

[3] Eindhoven Univ Technol, COBRA Res Inst, NL-5600 MB Eindhoven, Netherlands

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 26期

关键词：

D O I：

10.1063/1.1530732

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the growth of superconductive thin films of magnesium diboride (MgB2) by molecular-beam epitaxy. A Si(111) substrate with a seed layer of MgO was used for the growth of these films by varying parameters such as the growth temperature, Mg:B flux ratio and deposition rate as well as the background pressure. It was found that highly crystallized films could already form at 250degreesC; however, only in a narrow window of growth parameters. The highest critical temperature of 35.2 K with a sharp transition (DeltaT(C) of 0.5 K) was observed for films grown at 300 degreesC. Using a capping layer of MgO proved to be highly beneficial for the preservation and the smoothness of these films. Together with the fact that MgO proved to be a good seed layer for thin films of MgB2 makes it an ideal candidate for growing all epitaxial MgB2 Josephson junctions. (C) 2002 American Institute of Physics.

引用

页码：4982 / 4984

页数：3

共 16 条

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