Optimization of buffer layers for lattice-mismatched epitaxy of GaxIn1-xAs/InAsyP1-y double-heterostructures on InP

被引：32

作者：

Ahrenkiel, S. P. ^{[1
]}

Wanlass, M. W. ^{[1
]}

Carapella, J. J. ^{[1
]}

Ahrenkiel, R. K. ^{[1
]}

Johnston, S. W. ^{[1
]}

Gedvilas, L. M. ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2007年 / 91卷 / 10期

关键词：

epitaxy of thin films; semiconductors; indium phosphide; transmission electron microscopy; diffraction; chemical vapor deposition;

D O I：

10.1016/j.solmat.2007.02.008

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

We optimize InAsyP1-y buffer layers and compositional grades for lattice-mismatched heteroepitaxy of GaxIn1-xAs/InAsyP1-y double-heterostructures on InP. The strains of the active and buffer layers depend on the bulk misfit difference between these layers. The misfit difference is adjusted to eliminate strain in the active layer, thus avoiding misfit dislocations and surface topography that would otherwise form to relieve strain. The optimized structure uses an "overshoot" with respect to the conventional design in the misfit and As composition of the InAsyP1-y buffer. Nearly optimized heterostructures typically show excellent structural quality and extended minority-carrier lifetimes. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：908 / 918

页数：11

共 15 条

[1] MATERIAL PARAMETERS OF IN1-XGAXASYP1-Y AND RELATED BINARIES [J].