DISLOCATIONS AND STRAIN RELIEF IN COMPOSITIONALLY GRADED LAYERS

被引:288
作者
TERSOFF, J
机构
[1] IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights
关键词
D O I
10.1063/1.108842
中图分类号
O59 [应用物理学];
学科分类号
摘要
The performance of strained-layer heterostructures is often limited by threading dislocations. Such defects can be reduced, and in some cases nearly eliminated, by growing a graded buffer layer. Here, we provide a quantitative picture of the role of grading, by calculating the equilibrium distribution of dislocations and residual strain in such compositionally graded films. In layers with graded strain, threading dislocations are subject to greater force and weaker pinning than in uniform layers, helping them to be swept to the edge of the sample.
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页码:693 / 695
页数:3
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