Photoreflectance study of Si-doped GaN grown by metal-organic chemical vapor deposition

被引：52

作者：

Zhang, X ^{[1
]}

Chua, SJ ^{[1
]}

Liu, W ^{[1
]}

Chong, KB ^{[1
]}

机构：

[1] Natl Univ Singapore, Dept Elect Engn, Ctr Optoelect, Singapore 119260, Singapore

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 15期

关键词：

D O I：

10.1063/1.121217

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Si-doped n-GaN films grown by metal-organic chemical vapor deposition were studied by photoreflectance (PR) spectroscopy. Based on the intense optical transitions observed in the room-temperature PR spectra, the energy positions of the near-band-edge transition fur n-GaN samples with different Si-doping levels were determined through theoretical curve fitting under the weak-field approximation. Furthermore, based on the observed dependence of the redshift in the near-band-edge transition energy with the carrier concentration and the approach using the many-body theory, the band-gap renormalization coefficient for GaN was derived to be (2.4 +/- 0.5) x 10(-8) eV cm. This value was found to be nearly 35% larger than that for GaAs. (C) 1998 American Institute of Physics.

引用

页码：1890 / 1892

页数：3

共 12 条

[1] THIRD-DERIVATIVE MODULATION SPECTROSCOPY WITH LOW-FIELD ELECTROREFLECTANCE [J].

ASPNES, DE .

SURFACE SCIENCE, 1973, 37 (01) :418-442

[2] CONCENTRATION-DEPENDENT ABSORPTION AND SPONTANEOUS EMISSION OF HEAVILY DOPED GAAS [J].

CASEY, HC ;

STERN, F .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (02) :631-643

[3] Exciton spectra of cubic and hexagonal GaN epitaxial films [J].

Chichibu, S ;

Okumura, H ;

Nakamura, S ;

Feuillet, G ;

Azuhata, T ;

Sota, T ;

Yoshida, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1997, 36 (3B) :1976-1983

[4] Time-resolved-spectrum studies of GaN light emitting diodes [J].

Choa, FS ;

Fan, JY ;

Liu, PL ;

Sipior, J ;

Rao, G ;

Carter, GM ;

Chen, YJ .

APPLIED PHYSICS LETTERS, 1996, 69 (24) :3668-3670

[5] BAND-GAP RENORMALIZATION IN SEMICONDUCTOR QUANTUM WELLS CONTAINING CARRIERS [J].

KLEINMAN, DA ;

MILLER, RC .

PHYSICAL REVIEW B, 1985, 32 (04) :2266-2272

[6] Photoluminescence characterization of the quantum well structure and influence of optical illumination on the electrical performance of AlGaN/GaN modulation-doped field-effect transistors [J].

Mohammad, SN ;

Fan, ZF ;

Salvador, A ;

Aktas, O ;

Botchkarev, AE ;

Kim, W ;

Morkoc, H .

APPLIED PHYSICS LETTERS, 1996, 69 (10) :1420-1422

[7] Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes with a lifetime of 27 hours [J].

Nakamura, S ;

Senoh, M ;

Nagahama, S ;

Iwasa, N ;

Yamada, T ;

Matsushita, T ;

Sugimoto, Y ;

Kiyoku, H .

APPLIED PHYSICS LETTERS, 1997, 70 (11) :1417-1419

[8]

NAKAMURA S, 1997, JPN J APPL PHYS PT 2, V35, pL1013

[9] Optical properties of Si-doped GaN [J].

Schubert, EF ;

Goepfert, ID ;

Grieshaber, W ;

Redwing, JM .

APPLIED PHYSICS LETTERS, 1997, 71 (07) :921-923

[10] FRANZ-KELDYSH OSCILLATIONS IN MODULATION SPECTROSCOPY [J].

SHEN, H ;

DUTTA, M .

JOURNAL OF APPLIED PHYSICS, 1995, 78 (04) :2151-2176

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