Optimizing and quantifying dopant mapping using a scanning electron microscope with a through-the-lens detector

被引：35

作者：

Schönjahn, C

Broom, RF

Humphreys, CJ

Howie, A

Mentink, SAM

机构：

[1] Univ Cambridge, Dept Mat Sci & Met, Cambridge CB2 3QZ, England

[2] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

[3] Philips Res Labs, NL-5656 AA Eindhoven, Netherlands

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 02期

关键词：

D O I：

10.1063/1.1592302

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Although dopant contrast in the scanning electron microscope has been known for a long time, its quantification is still a matter of debate mainly due to the lack of understanding of the contrast mechanism. Here we show that dopant contrast can be usefully increased at low extraction voltages. The effect may be related to the different angular and energy distribution of secondary electrons emitted from the p and n regions and for quantitative work should be studied over the full range of extraction potential. (C) 2003 American Institute of Physics.

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收藏

页码：293 / 295

页数：3

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