Deactivation and diffusion of boron in ion-implanted silicon studied by secondary electron imaging

Secondary electron (SE) imaging in a scanning electron microscope is used to map electrically active dopant distributions of B-doped superlattices in Si. By comparing SE contrast profiles with secondary ion mass spectroscopy data, it is shown that B is electrically deactivated when the damage caused during Si implantation falls onto a doped region. Following a 450 degrees C anneal, the effect of the implantation damage is severely reduced in the SE profiles and the B is partially reactivated. An 815 degrees C anneal results in transient enhanced diffusion of some of the B with the remainder trapped in an inactive immobile peak. (C) 1999 American Institute of Physics. [S0003-6951(99)04516-7].