Enhancement of secondary electron emission from heavily Si-implanted and Si-doped GaAs

The enhancement of secondary electron emission was observed for both heavily Si-implanted and heavily Si-doped GaAs after annealing at 950 degrees C. The enhancement was found to be related to the generation of Ga vacancy during annealing. The assessment of electrical properties of the enhanced area revealed that the enhancement arises from the secondary electron production process in the bulk region, not from the surface effect including band bending at the wafer surface. We suggested that the excitons produced by primary electrons would ionize the lattice defects introduced in ion implantation and/or annealing processes. (C) 1997 American Institute of Physics.