Positive and Negative Oxygen Vacancies in Amorphous Silica

被引：90

作者：

Kimmel, A. V. ^{[1
]}

Sushko, P. V. ^{[1
]}

Shluger, A. L. ^{[1
,2
]}

Bersuker, G. ^{[3
]}

机构：

[1] UCL, London Ctr Nanotechnol, Mortimer St, London WC1E 6BT, England

[2] UCL, London Ctr Nanotechnol, Dept Phys & Astron, London WC1E 6BT, England

[3] SEMATECH, Austin, TX 78741 USA

来源：

SILICON NITRIDE, SILICON DIOXIDE, AND EMERGING DIELECTRICS 10 | 2009年 / 19卷 / 02期

关键词：

SWITCHING OXIDE TRAPS; ELECTRON; SIO2; DEFECTS; DENSITY; HFO2;

D O I：

10.1149/1.3122083

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

We modeled all stable positive and negative charge states of oxygen vacancies originating from the neutral O-3 Si=Si O-3 defect in amorphous SiO2 (a-SiO2) using an embedded cluster method on a distribution of structural sites. For the first time, we predict the geometry, electronic structure and spectroscopic properties of doubly ionized and negatively charged oxygen vacancies in a-SiO2 and demonstrate that negatively charged vacancies serve as deep electron traps. The results demonstrate that oxygen vacancies can be responsible for both the electron and hole trapping in silica. We compare our findings with the previous calculations and with the recent experimental data.

引用

页码：3 / +

页数：3

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