Dielectric investigation of BaTiO3 thin-film capacitor

被引：16

作者：

Yoneda, Y ^{[1
]}

Sakaue, K

Terauchi, H

机构：

[1] Japan Atom Energy Res Inst, Synchroton Radiat Res Ctr, Hyogo 6795148, Japan

[2] Kwansei Gakuin Univ, Dept Phys, Sanda, Hyogo 6691337, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2000年 / 39卷 / 08期

关键词：

barium titanate; thin films; X-ray diffraction; dielectric measurements; space charge;

D O I：

10.1143/JJAP.39.4839

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The dielectric properties of BaTiO3 thin film were investigated on a highly c-axis-oriented epitaxial thin crystal. It was confirmed by X-ray diffraction that the film thickness was 120 Angstrom and that it was high-quality single-crystal film. The spread of crystal orientation of the BgTiO(3) thin film was the same as that of SrTiO3 substrate. However, the dielectric properties of this thin film were different from those of the BaTiO3 bulk crystals and were explained by the space-charge effect. The space-charge polarization of this film strongly depends on temperature and this behavior was observed after the incubation time had passed. The experimental results are discussed in terms of the interaction between the polarities of domain and space charges.

引用

页码：4839 / 4842

页数：4

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