Low-resistance ohmic contacts to AlGaN/GaN heterostructure using Si/Ti/Al/Cu/Au multilayer metal scheme

被引：16

作者：

Youn, CJ ^{[1
]}

Kang, KY

机构：

[1] Chonbuk Natl Univ, Semicond Phys Res Ctr, Chonju 561756, South Korea

[2] Elect & Telecommun Res Inst, Dept Res, Taejon 305350, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2000年 / 39卷 / 7A期

关键词：

AlGaN/GaN heterostructure; ohmic contact; Si diffusion; Al-Ti-Si-N intermetallic phase layer;

D O I：

10.1143/JJAP.39.3955

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A SiTi/Al/Cu/Au metallization scheme has been developed to achieve a low specific contact resistivity to a n-AlGaN/GaN heterostructure. A specific contact resistivity as low as 3.8 x 10(-5) Omega cm(2) was obtained after annealing at 800 degrees C for 30 s. The interfacial reaction between the Si/Ti/Al/Cu/Au layers and the AlGaN was investigated by secondary-ion mass spectroscopy and transmission electron microscopy. An Al-Ti-Si-N intermetallic phase layer was observed at the interface. The ohmic contact formation is found to be related to Si diffusion and the formation of the Al-Ti-Si-N intermetallic phase layer.

引用

页码：3955 / 3956

页数：2

共 10 条

[1] Ultra-low resistive ohmic contacts on n-GaN using Si implantation [J].

Burm, J ;

Chu, K ;

Davis, WA ;

Schaff, WJ ;

Eastman, LF ;

Eustis, TJ .

APPLIED PHYSICS LETTERS, 1997, 70 (04) :464-466

[2]

Kaminska E, 1998, MATER RES SOC SYMP P, V482, P1077

[3]

Khan MA, 1996, APPL PHYS LETT, V68, P3022, DOI 10.1063/1.116684

[4] Short-channel GaN/AlGaN doped channel heterostructure field effect transistors with 36.1 cutoff frequency [J].

Khan, MA ;

Chen, Q ;

Shur, MS ;

Dermott, BT ;

Higgins, JA ;

Burm, J ;

Schaff, W ;

Eastman, LF .

ELECTRONICS LETTERS, 1996, 32 (04) :357-358

[5]

Kim DW, 1998, MATER RES SOC SYMP P, V482, P1083

[6] Electrical properties of multiple high-dose Si implantation in p-GaN [J].

Lai, WC ;

Yokoyama, M ;

Tsai, CC ;

Chang, CS ;

Guo, JD ;

Tsang, JS ;

Chan, SH ;

Chang, CY .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1999, 38 (7B) :L802-L804

[7] Study of contact formation in AlGaN/GaN heterostructures [J].

Liu, QZ ;

Yu, LS ;

Deng, F ;

Lau, SS ;

Chen, Q ;

Yang, JW ;

Khan, MA .

APPLIED PHYSICS LETTERS, 1997, 71 (12) :1658-1660

[8] Microstructure of Ti/Al and Ti/Al/Ni/Au ohmic contacts for n-GaN [J].

Ruvimov, S ;

LilientalWeber, Z ;

Washburn, J ;

Duxstad, KJ ;

Haller, EE ;

Fan, ZF ;

Mohammad, SN ;

Kim, W ;

Botchkarev, AE ;

Morkoc, H .

APPLIED PHYSICS LETTERS, 1996, 69 (11) :1556-1558

[9] Metal contacts to n-AlxGa1-xN [J].

Sampath, A ;

Ng, HM ;

Korakakis, D ;

Moustakas, TD .

NITRIDE SEMICONDUCTORS, 1998, 482 :1095-1099

[10] Very high breakdown voltage and large transconductance realized on GaN heterojunction field effect transistors [J].

Wu, YF ;

Keller, BP ;

Keller, S ;

Kapolnek, D ;

Kozodoy, P ;

Denbaars, SP ;

Mishra, UK .

APPLIED PHYSICS LETTERS, 1996, 69 (10) :1438-1440

← 1 →