Lateral- and pendeo-epitaxial growth and defect reduction in GaN thin films

被引：7

作者：

Davis, RF ^{[1
]}

Nam, OH ^{[1
]}

Zheleva, TS ^{[1
]}

Gehrke, T ^{[1
]}

Linthicum, KJ ^{[1
]}

Rajagopal, P ^{[1
]}

机构：

[1] N Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA

来源：

SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2 | 2000年 / 338-3卷

关键词：

inductively coupled etching; lateral epitaxial overgrowth; LEG; MOVPE; pendeo-epitaxy; scanning electron microscopy; silicon nitride mask; thin film morphology;

D O I：

10.4028/www.scientific.net/MSF.338-342.1471

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Monocrystalline discrete and coalesced films of lateral- and pendeo-epitaxial GaN layers originating from stripes deposited within windows contained in SiO2 masks or from side walls of seed structures topped with silicon nitride masks have been grown via organometallic vapor phase deposition using on-axis GaN/AlN/6H-SiC(0001) substrates. Scanning and transmission electron microscopies and atomic force microscopy revealed (1) coalescence of the laterally growing layers, (2) a low density of dislocations in the overgrown regions, and (3) an RMS roughness of the (11 (2) over bar0) sidewall plane of the pendeo-epitaxial structures of approximately 0.100 nm.

引用

页码：1471 / 1476

页数：6

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