Influence of Na on Cu(In,Ga)Se2 solar cells grown on polyimide substrates at low temperature: Impact on the Cu(In,Ga)Se2/Mo interface

被引:75
作者
Caballero, R. [1 ]
Kaufmann, C. A. [1 ]
Eisenbarth, T. [1 ]
Grimm, A. [1 ]
Lauermann, I. [1 ]
Unold, T. [1 ]
Klenk, R. [1 ]
Schock, H. W. [1 ]
机构
[1] Helmholtz Zentrum Berlin Mat & Energie, D-14109 Berlin, Germany
关键词
antireflection coatings; copper compounds; electric admittance; gallium compounds; indium compounds; magnesium compounds; molybdenum; semiconductor growth; semiconductor-metal boundaries; solar absorber-convertors; solar cells; ternary semiconductors; vapour deposition; X-ray photoelectron spectra; FILMS;
D O I
10.1063/1.3340459
中图分类号
O59 [应用物理学];
学科分类号
摘要
There are still open questions regarding the nature of the positive effect of the presence of Na on the performance of Cu(In,Ga)Se-2 based, chalcopyrite thin film solar cells, especially at low processing temperatures. Studying Cu(In,Ga)Se-2 thin film devices fabricated from low-temperature coevaporated absorbers on polyimide substrates by admittance and J-V-T measurements, characteristic properties are identified for different amounts of Na present during the growth. A roll-over behavior can be directly correlated with the Na-content. X-ray photoelectron spectroscopy shows the development of a MoSe2 phase at the back contact of the device. Efficiencies of 15.1% with MgF2 antireflection coating are demonstrated.
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页数:3
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