Optical absorption of free-standing porous silicon films

被引：43

作者：

Chan, MH ^{[1
]}

So, SK ^{[1
]}

Cheah, KW ^{[1
]}

机构：

[1] HONG KONG BAPTIST UNIV,DEPT PHYS,KOWLOON,HONG KONG

来源：

JOURNAL OF APPLIED PHYSICS | 1996年 / 79卷 / 06期

关键词：

D O I：

10.1063/1.361216

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The optical absorptions of anodically etched p(+) and n(+) porous silicon (PS) films were investigated by photothermal deflection spectroscopy. Si-H stretching overtones and combination bands of Si-F and Si-H were observed. The defect model in hydrogenated amorphous silicon was used to explain the Urbach edge and the subgap absorptions of PS. The dangling bond defect densities in PS were estimated. (C) 1996 American Institute of Physics.

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页码：3273 / 3275

页数：3

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