Air-gaps in 0.3 μm electrical interconnections

被引：53

作者：

Kohl, PA ^{[1
]}

Bhusari, DM

Wedlake, M

Case, C

Klemens, FP

Miner, J

Lee, BC

Gutmann, RJ

Shick, R

机构：

[1] Georgia Inst Technol, Sch Chem Engn, Atlanta, GA 30332 USA

[2] Lucent Technol, Murray Hill, NJ 07974 USA

[3] Rensselaer Polytech Inst, Troy, NY 12180 USA

[4] BF Goodrich Co, Brecksville, OH 44141 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2000年 / 21卷 / 12期

关键词：

air-gaps; dielectric constant; interconnection; low k;

D O I：

10.1109/55.887464

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A copper/air-gap interconnection structure using a sacrificial polymer and SiO2 in a damascene process has been demonstrated. The air-gap occupies the entire intralevel volume with fully densified SiO2 as the planar interlevel dielectric, The copper was deposited by physical vapor deposition and planarized by chemical-mechanical planarization. The Ta/Cu barrier/seed layer was deposited by physical vapor deposition; the bulk copper was electrochemically deposited. The resulting structure has an effective intralevel dielectric constant of 2.19.

引用

页码：557 / 559

页数：3

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