Evidence of mobile Ag and growth mechanism of YBa2Cu3O7-y films deposited on cube textured Ag tape by chemical vapor deposition

被引:7
作者
Hasegawa, M
Yoshida, Y
Iwata, M
Akata, H
Higashiyama, K
Takai, Y
Hirabayashi, I
机构
[1] Int Superconduct Technol Ctr, Div 5, Superconduct Res Lab, Atsuta Ku, Nagoya, Aichi 4568587, Japan
[2] Nagoya Univ, Dept Energy Engn & Sci, Chikusa Ku, Nagoya, Aichi 4648603, Japan
[3] Hitachi Ltd, Hitachi Res Lab, Hitachi, Ibaraki 3191221, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2000年 / 39卷 / 4A期
关键词
YBa2Cu3O7-y; spiral growth; MOCVD; surfactant; CUTE-Ag;
D O I
10.1143/JJAP.39.1719
中图分类号
O59 [应用物理学];
学科分类号
摘要
YBa2Cu3O7-y (YBCO) films were prepared on {100}[001] cube textured Ag tape (CUTE-Ag tape) by metal organic chemical vapor deposition (MOCVD) using a liquid state metal organic (MO) source. Numerous spiral steps accompanied by screw dislocations were observed and many particles were observed on the terrace surface of the spiral steps by atomic force microscopy (AFM). We observed a change in surface morphology before and after heat treatment in vacuum at 550 degrees C. After heat treatment, these particles became smaller and concentrated at the edge of the spiral steps. We confirmed by scanning Auger microscopy that the main composition of these particles was Ag. We propose a growth mechanism on a Ag substrate in which Ag segregates to the surface and acts as surfactant for YBCO growth.
引用
收藏
页码:1719 / 1720
页数:2
相关论文
共 10 条
[1]   SURFACTANTS IN EPITAXIAL-GROWTH [J].
COPEL, M ;
REUTER, MC ;
KAXIRAS, E ;
TROMP, RM .
PHYSICAL REVIEW LETTERS, 1989, 63 (06) :632-635
[2]  
DOI T, 1995, ADV SUPERCONDUCTIVIT, V8, P903
[3]   SCREW DISLOCATIONS IN HIGH-TC FILMS [J].
GERBER, C ;
ANSELMETTI, D ;
BEDNORZ, JG ;
MANNHART, J ;
SCHLOM, DG .
NATURE, 1991, 350 (6316) :279-280
[4]   GROWTH-MECHANISM OF SPUTTERED FILMS OF YBA2CU3O7 STUDIED BY SCANNING TUNNELING MICROSCOPY [J].
HAWLEY, M ;
RAISTRICK, ID ;
BEERY, JG ;
HOULTON, RJ .
SCIENCE, 1991, 251 (5001) :1587-1589
[5]   Spiral growth of YBa2Cu3O7-y thin films by metalorganic chemical vapor deposition using liquid-state sources [J].
Iwata, M ;
Yoshida, Y ;
Hasegawa, M ;
Ito, Y ;
Hirabayashi, I ;
Takai, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1998, 37 (6B) :L715-L717
[6]   ABRUPT SI/GE/SI(001) INTERFACES FABRICATED WITH BI AS A SURFACTANT [J].
SAKAMOTO, K ;
MATSUHATA, H ;
KYOYA, KI ;
MIKI, K ;
SAKAMOTO, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (4B) :2307-2310
[7]   Bi: Perfect surfactant for Ge growth on Si(111)? [J].
Schmidt, T ;
Falta, J ;
Materlik, G ;
Zeysing, J ;
Falkenberg, G ;
Johnson, RL .
APPLIED PHYSICS LETTERS, 1999, 74 (10) :1391-1393
[8]   MODIFICATION OF GROWTH-KINETICS IN SURFACTANT-MEDIATED EPITAXY [J].
VOIGTLANDER, B ;
ZINNER, A ;
WEBER, T ;
BONZEL, HP .
PHYSICAL REVIEW B, 1995, 51 (12) :7583-7591
[9]   Surface morphology and growth mechanism of YBa2Cu3O7-y films by metalorganic chemical vapor deposition using liquid sources [J].
Yoshida, Y ;
Ito, Y ;
Hirabayashi, I ;
Nagai, H ;
Takai, Y .
APPLIED PHYSICS LETTERS, 1996, 69 (06) :845-847
[10]  
YSOHIDA Y, 1997, JPN J APPL PHYS, V36, pL1376