Growth of Epitaxial 3C-SiC Films on Si(100) via Low Temperature SiC Buffer Layer

被引：35

作者：

Lien, Wei-Cheng ^{[1
,3
]}

Ferralis, Nicola ^{[3
]}

Carraro, Carlo ^{[1
,2
,3
]}

Maboudian, Roya ^{[1
,2
,3
]}

机构：

[1] Univ Calif Berkeley, Berkeley Sensor & Actuator Ctr, Berkeley, CA 94720 USA

[2] INM Leibniz Inst New Mat, D-66125 Saarbrucken, Germany

[3] Univ Calif Berkeley, Dept Chem Engn, Berkeley, CA 94720 USA

来源：

CRYSTAL GROWTH & DESIGN | 2010年 / 10卷 / 01期

基金：

美国国家科学基金会;

关键词：

CHEMICAL-VAPOR-DEPOSITION; LPCVD REACTOR; SI(001); MEMS;

D O I：

10.1021/cg901189k

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The epitaxial growth of 3C-SiC films Si(100) substrates is demonstrated using a two-step chemical vapor deposition (CVD) process. A thin (50 nm) SiC buffer layer grown at 925 degrees C using 1,3-disilabutane is shown to enable the growth of a high crystalline quality epitaxial 3C-SiC film using methyltrichlorosilane at 1200 degrees C. The ability to deposit high-quality epitaxial film is traced to the suppression of void defects and to the improvement in film adhesion obtained by the deposition of the buffer layer at low temperature.

引用

页码：36 / 39

页数：4

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