Evidence of Structural Strain in Epitaxial Graphene Layers on 6H-SiC(0001)

被引：264

作者：

Ferralis, Nicola ^{[1
]}

Maboudian, Roya ^{[1
]}

Carraro, Carlo ^{[1
]}

机构：

[1] Univ Calif Berkeley, Dept Chem Engn, Berkeley, CA 94720 USA

来源：

PHYSICAL REVIEW LETTERS | 2008年 / 101卷 / 15期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1103/PhysRevLett.101.156801

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The early stages of epitaxial graphene layer growth on the Si-terminated 6H-SiC (0001) are investigated by Auger electron spectroscopy (AES) and depolarized Raman spectroscopy. The selection of the depolarized component of the scattered light results in a significant increase in the C-C bond signal over the second order SiC Raman signal, which allows us to resolve submonolayer growth, including individual, localized C=C dimers in a diamondlike carbon matrix for AES C/Si ratio of similar to 3, and a strained graphene layer with delocalized electrons and Dirac single-band dispersion for AES C/Si ratio > 6. The linear strain, measured at room temperature, is found to be compressive, which can be attributed to the large difference between the coefficients of thermal expansion of graphene and SiC. The magnitude of the compressive strain can be varied by adjusting the growth time at fixed annealing temperature.

引用

页数：4

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