Correlation between structure and photoluminescence in amorphous hydrogenated silicon nitride alloys

被引：12

作者：

Molinari, M ^{[1
]}

Rinnert, H ^{[1
]}

Vergnat, M ^{[1
]}

机构：

[1] Univ Nancy 1, UMR CNRS 7556, Phys Mat Lab, F-54506 Vandoeuvre Les Nancy, France

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2003年 / 16卷 / 3-4期

关键词：

amorphous silicon nitride alloys; reactive evaporation; x-ray photoemission spectroscopy; infrared absorption spectroscopy; photoluminescence;

D O I：

10.1016/S1386-9477(02)00629-X

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

As-deposited a-SiNxH (0.1 < x < 0.9) thin films prepared by. evaporation of silicon under a flow of nitrogen and hydrogen ions exhibit visible photoluminescence at room temperature without any posttreatment. The nitrogen concentration was determined by X-ray photoemission spectroscopy. The structural characterization was performed with Fourier transform infrared absorption spectroscopy. The optical gap was obtained from transmission measurements in the ultraviolet-visible-near infrared range. These studies were correlated to the evolution of the photoluminescence properties. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：445 / 449

页数：5

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