A current-folded up-conversion mixer and VCO with center-tapped inductor in a SiGe-HBT technology for 5-GHz wireless LAN applications

被引：24

作者：

Grau, G ^{[1
]}

Langmann, U

Winkler, W

Knoll, D

Osten, J

Pressel, K

机构：

[1] Ruhr Univ Bochum, Lehrstuhl Elekt Bauelemente, D-44780 Bochum, Germany

[2] IHP, D-15236 Frankfurt, Oder, Germany

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2000年 / 35卷 / 09期

关键词：

center-tapped inductor; inductor modeling; RF circuits; SiGeHBT; up-conversion mixer; VCO; wireless LAN;

D O I：

10.1109/4.868046

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes a 5.8-GHz up-conversion mixer core based on a current-folded architecture and a 5-GHz differential emitter-coupled voltage-controlled oscillator (VCO) utilizing a center-tapped inductor and a substrate shield, Both circuits are fabricated in a 0.8.mu m 45-GHz f(T) SiGe heterojunction bipolar transistor (HBT) technology. The supply voltage range is between -2.3 V and -3.3 V to meet the requirements of mobile circuits. Special care has been taken with the inductor model. A distributed modeling approach was used to generate an inductor model from a geometrical description. This type of model also has the advantage that it can simulate RF effects in both time and frequency domain.

引用

页码：1345 / 1352

页数：8

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