SiGe & GaAs as competitive technologies for RF-applications

被引：21

作者：

König, U ^{[1
]}

机构：

[1] Daimler Benz AG, Res Ctr, D-89081 Ulm, Germany

来源：

PROCEEDINGS OF THE 1998 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING | 1998年

关键词：

D O I：

10.1109/BIPOL.1998.741886

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The status of SiGe HBTs is reviewed and related to III/V HBTs and HFETs. Figures of merit considered are DC performance (gains, Gummel plot), frequencies (f(T), f(max)), noise (F-min, f(C)), and power aspects (PAE). Criteria for a further optimization of SiGe HBTs (layer parameters, layout rules, technologies) will be pointed out.

引用

页码：87 / 92

页数：6

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