Impact of process conditions on interface and high-κ trap density studied by variable Tcharge-Tdischarge charge pumping (VT2CP)

被引：7

作者：

Zahid, M. B.

Degraeve, R.

Zhang, J. F.

Groeseneken, G.

机构：

[1] Liverpool John Moores Univ, Sch Engn, Liverpool L3 3AF, Merseyside, England

[2] IMEC, B-3001 Louvain, Belgium

[3] Univ Kent, ESAT Dept, Louvain, Belgium

来源：

MICROELECTRONIC ENGINEERING | 2007年 / 84卷 / 9-10期

关键词：

charge pumping; trap density; Hf-based dielectrics; plasma nitridation; thermal nitridation; layer separation;

D O I：

10.1016/j.mee.2007.04.048

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper we use an improved way to measure electrical traps in Hf-based dielectrics by using Variable T,harg-Tdischarge Charge Pumping ((VTCp)-Cp-2). By independently controlling the pulse low and high level timings, we are able to clearly separate the traps in the interfacial SiO2 from the traps in the High-K layer, independently of the process conditions and Hf-concentration. The results show that the trap density varies by two orders of magnitude for the samples used in this work, indicating the importance of process optimization.

引用

页码：1951 / 1955

页数：5

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[7]

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[8]

ZAHID MB, 2007, IN PRESS INT REL PHY

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